PMBFJ112,215 datasheet

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• Маркировка
  PMBFJ112,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PMBFJ112,215 Configuration: Single Drain Current (idss At Vgs=0): 5 mA Drain Source Voltage Vds: 40 V Gate-source Breakdown Voltage: - 40 V Gate-source Cutoff Voltage: - 5 V to - 1 V ID_COMPONENTS: 1949152 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 300 mW Resistance Drain-source Rds (on): 50 Ohms Transistor Polarity: N-Channel Product Category: Transistors RF JFET RoHS: yes Resistance Drain-Source RDS (on): 50 Ohms Drain Source Voltage VDS: 40 V Gate-Source Cutoff Voltage: - 5 V to - 1 V Gate-Source Breakdown Voltage: - 40 V Drain Current (Idss at Vgs=0): 5 mA Factory Pack Quantity: 3000 Part # Aliases: PMBFJ112 T/R Other Names: 933929740215::PMBFJ112 T/R::PMBFJ112 T/R
• Количество страниц
  8 шт.
• Формат
  PDF

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• Размер файла
  46,44 KB

PMBFJ112,215 datasheet скачать

PMBFJ112,215 datasheet